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The RJH60D2DPP-E0#T2 is a single N-channel silicon IGBT manufactured by Renesas Electronics. It features a TO-220FP-3 through-hole package and operates with a drain-source breakdown voltage of 600 V and a continuous drain current of 25 A. The device has a maximum gate-emitter voltage of ±30 V and utilizes trench gate technology for enhanced performance.
Verify the specific suffix E0#T2 against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with thermal management requirements for the TO-220FP-3 package. Cross-reference datasheet parameters for absolute maximum ratings before integration into final designs.
Select this component for applications requiring 600V blocking capability and 25A current handling in a standard through-hole format. Consider the integrated fast recovery diode if synchronous rectification or freewheeling functions are needed without additional discrete components. Evaluate thermal resistance limits for the intended operating environment.
This part belongs to the RJH60D series of high-voltage IGBTs from Renesas Electronics. The series leverages advanced trench gate technology to improve efficiency and switching speed compared to conventional planar structures. The TO-220FP-3 package provides robust mechanical mounting and thermal dissipation capabilities suitable for industrial power electronics.
Public confirmed substitute part numbers: RJH60D2DPP-A0, RJH60D2DPP-M0.