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The Renesas RJH60D6DPM-00#T1 is a trench-type Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A at 25°C. The device exhibits a typical saturation voltage of 2.2 V under test conditions of 15 V gate drive and 50 A collector current. Key switching parameters include a turn-on time of 60 ns and a turn-off time of 190 ns, with a reverse recovery time of 100 ns. The component is housed in a TO-3PFM through-hole package, supporting a maximum junction temperature of 150°C and a power dissipation of 55 W.
This component is designated as obsolete by the manufacturer. Product Change Notifications indicate an End-of-Life date scheduled for February 1, 2026. Current availability is restricted, and procurement should focus on verifying remaining stock or initiating replacement strategies immediately to ensure supply continuity for existing designs.
Designers should evaluate the thermal resistance and heat sinking requirements carefully, as the TO-3PFM package dissipates up to 55 W. The 600V rating suits medium-voltage AC/DC conversion tasks. Due to the obsolete status, alternative components with similar current ratings and package footprints must be selected for new product development.
The RJH60D6DPM-00#T1 belongs to the Renesas IGBT series specifically developed for inverter applications. It is part of a family of devices optimized for frequencies between 1 kHz and 50 kHz. This specific model represents a higher current variant within the 600V trench IGBT lineup, intended for industrial and commercial power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Renesas official resources for qualified alternatives compatible with the TO-3PFM package and 90A current rating.