RJH60D7DPQ-E0#T2

Overview

The RJH60D7DPQ-E0#T2 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A. The device exhibits a maximum on-state collector-emitter voltage of 2.2 V when tested at a gate-emitter voltage of 15 V and a collector current of 50 A. Packaged in a TO-247 form factor, it supports through-hole mounting and operates within a junction temperature range up to 150°C.

Feature Summary

• Utilizes trench-gate technology for optimized switching performance
• Designed for high-current applications with a 90 A collector rating
• Provides robust thermal management capabilities suitable for power electronics

Applications

• Inverter systems
• Industrial motor drives
• Power supply units

Procurement Notes

Verify the specific suffix E0#T2 against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with TO-247 mounting requirements and validate that the component meets RoHS3 standards for the intended manufacturing process.

Selection Notes

Select this IGBT for designs requiring 600 V blocking capability and high current handling. Consider the 2.2 V saturation voltage for conduction loss calculations. Evaluate the switching energy parameters against the thermal design constraints of the target application to ensure reliable operation under load.

Part Context

This component belongs to the RJH60D7 series of trench-gate IGBTs from Renesas. It serves as a discrete power semiconductor solution for medium-power conversion tasks. The part is distinct from similar models like the RJH60D7DPK-00#T0, which utilizes a different TO-3P package configuration while sharing core electrical characteristics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.