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Product Detailed Parameters
- Description：IGBT TRENCH 600V 50A TO-247A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.82V @ 15V, 25A
- Power - Max：201.6 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：46ns/70ns
- Test Condition：400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247A
- Grade：-
- Qualification：-
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Overview
The RJH60F0DPQ-A0#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features an integrated fast recovery diode within a single package, utilizing thin wafer technology for high-speed switching capabilities. The device is designed for power conversion applications requiring efficient energy handling and low conduction losses.
Feature Summary
- Incorporates trench gate and thin wafer technology to achieve high-speed switching performance.
- Integrates a built-in fast recovery diode within the same package structure.
- Designed for inverter applications including UPS systems, motor control, solar power generation, and welding equipment.
Applications
- Uninterruptible Power Supply (UPS) systems
- Motor control drives
- Solar power generation inverters
- Welding equipment
Procurement Notes
Verify component authenticity through authorized Renesas distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure storage conditions meet specified humidity requirements to prevent package degradation during handling and soldering processes.
Selection Notes
Evaluate thermal management requirements based on the specific application's power dissipation needs. Consider the switching frequency range of 1 to 50 kHz when designing gate drive circuits. Verify that the short-circuit withstand capability aligns with the system protection strategy, as this parameter may vary by specific variant.
Part Context
This component belongs to the RJH series of IGBTs from Renesas, which are optimized for inverter applications. The series utilizes advanced trench gate technology to balance low saturation voltage with fast switching speeds, making it suitable for medium-frequency power conversion tasks.
Replacement Considerations
Consult official Renesas documentation for qualified substitute part numbers. Cross-reference electrical parameters such as collector-emitter voltage, continuous current rating, and package dimensions to ensure mechanical and functional compatibility with existing designs.
