RJH60F5DPQ-A0#T0

RJH60F5DPQ-A0#T0

  • Description:IGBT TRENCH 600V 80A TO-247A
  • Series:-

SKU:e3901dd67eb4 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 80A TO-247A
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 40A
  • Power - Max:260.4 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:53ns/105ns
  • Test Condition:400V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr):90 ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247A
  • Grade:-
  • Qualification:-

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RJH60F5DPQ-A0#T0

Overview

The RJH60F5DPQ-A0#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 40A at 25°C. The device utilizes thin wafer technology to achieve low saturation voltage, specified as 1.37V typ. at 40A with a 15V gate drive. It incorporates a built-in fast recovery diode within the same package. Typical switching characteristics include a turn-off time of 68ns under inductive load conditions.

Feature Summary

  • Integrates a fast recovery diode within the IGBT package for simplified circuit design
  • Employs trench gate and thin wafer technology to minimize conduction losses
  • Designed for high-speed power switching applications

Applications

  • High speed power switching circuits
  • Power factor correction (PFC) modules
  • Industrial motor drives

Procurement Notes

Verify the specific suffix #T0 against official Renesas documentation to confirm packaging type and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the component matches the exact part number RJH60F5DPQ-A0#T0 to avoid functional mismatches with similar variants.

Selection Notes

Select this component for designs requiring a 600V IGBT with integrated freewheeling diode. The 40A current rating and low VCE(sat) make it suitable for medium-power applications. Evaluate thermal management needs based on the 200W power dissipation capability if applicable. Compare switching speeds against system frequency requirements.

Part Context

This part belongs to the Renesas RJH series of high-speed IGBTs. It shares architectural similarities with other models like the RJH60F5BDPQ-A0 but differs in specific electrical ratings and packaging configurations. The series is designed for efficient power conversion in industrial and consumer electronics.

Replacement Considerations

Direct substitutes may include the RJH60F5BDPQ-A0 or RJH60F6BDPQ-A0 from the same manufacturer family. Verify pin compatibility and electrical parameter overlaps before substitution. Cross-reference datasheets for differences in switching times and thermal resistance.

RJH60F5DPQ-A0#T0RJH60F5DPQ-A0#T0

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