RJH60T3DPK-M0#T2

$1.89

Description：IGBT
Series：*

SKU:24f306b51cfc Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RJH60T3DPK-M0#T2

Overview

The RJH60T3DPK-M0#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate technology and is housed in a TO-3P package for through-hole mounting. The device features a maximum collector-emitter breakdown voltage of 600 V and supports a continuous collector current of 60 A. Key electrical parameters include a maximum on-state voltage of 2.2 V at 15 V gate drive and 30 A collector current, with a typical switching time of 40 ns turn-on and 80 ns turn-off at 25°C.

Feature Summary

Employs trench gate IGBT technology for optimized performance
Designed for high-voltage power switching applications
Utilizes a robust TO-3P through-hole package for thermal management

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency inverters

Procurement Notes

Verify component authenticity and datasheet revisions directly with Renesas Electronics or authorized distributors. Confirm RoHS compliance status and moisture sensitivity levels prior to integration. Check for end-of-life notices or product change notifications that may affect long-term availability and supply chain stability for production planning.

Selection Notes

Select this component for circuits requiring 600 V blocking capability and moderate current handling up to 60 A. Ensure the application design accommodates the specified switching times and thermal dissipation requirements inherent to the TO-3P form factor. Validate gate drive voltage compatibility with the 15 V standard operating condition.

Part Context

This part belongs to the Renesas RJH series of single IGBTs, which are engineered for general-purpose power electronics. The series offers various current ratings within the same voltage class, allowing designers to scale performance while maintaining consistent packaging and interface characteristics across different power levels.

Replacement Considerations

Consult official Renesas documentation for qualified substitute part numbers. Cross-reference technical specifications such as voltage rating, current capacity, and package dimensions before considering alternative components from other manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.