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The RJH65T04BDPM-A0#T2 is a 650V, 4A N-channel Insulated Gate Bipolar Transistor (IGBT) from the Renesas G7H series. It utilizes trench gate and thin wafer technology to achieve fast switching characteristics with a typical turn-off time of 130ns at 25°C. The device features a collector-emitter saturation voltage of 2.1V at 4A and 25°C. Packaged in a compact DPAK format, it supports operating frequencies between 20kHz and 100kHz. This component is designed for high-efficiency power conversion applications requiring low conduction losses and robust performance.
Verify the specific suffix #T2 indicates tape-and-reel packaging when sourcing. Confirm the G7H generation designation matches current design requirements. Check for RoHS compliance documentation. Ensure thermal management solutions align with the DPAK package limitations. Validate availability status as product lifecycles may change.
Select this IGBT for applications requiring 650V blocking voltage and up to 4A continuous collector current. Consider the 130ns turn-off time for switching frequencies up to 100kHz. Evaluate the 2.1V Vce(sat) for efficiency needs at rated current. Compare against higher current variants if load demands exceed 4A. Ensure gate drive voltage compatibility with the specified 15V standard.
This part belongs to the Renesas RJP/RJH G7H IGBT family, which emphasizes high-speed switching and low loss through advanced trench gate architecture. The RJH series specifically targets surface-mount applications via packages like DPAK, offering an alternative to traditional through-hole TO-247 devices while maintaining similar electrical performance profiles for compact power stages.
Publicly confirmed direct substitutes are not available in the provided source data. Engineers should evaluate other G7H series parts with compatible voltage and current ratings. Cross-reference pinouts and thermal characteristics before adopting any alternative component.