RJH65T47DPQ-A0#T0

Overview

The RJH65T47DPQ-A0#T0 is a 650V, 30A N-channel trench gate IGBT from Renesas Electronics. It utilizes G7H series thin-wafer technology for high-speed switching with a typical turn-off time of 45ns at 20A. The device features a collector-emitter saturation voltage of 1.8V and operates within a junction temperature range of -40°C to +150°C. Packaged in a TO-247A through-hole housing, it supports continuous collector currents up to 30A at 100°C case temperature. This component is designed for power factor correction applications operating between 20kHz and 100kHz.

Feature Summary

• G7H series trench gate structure with thin-wafer technology for optimized switching performance
• High-speed switching capability with low turn-off delay time suitable for high-frequency operation
• Robust thermal management via TO-247A package supporting high power dissipation

Applications

• Power Factor Correction (PFC) circuits
• Industrial motor drives
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific suffix #T0 against official Renesas documentation to confirm tape-and-reel packaging versus tube configuration. Confirm current production status as legacy or active before procurement planning. Ensure compatibility with existing PCB footprints for the TO-247A package. Request latest datasheet revisions to check for any parameter updates or handling precautions.

Selection Notes

Select this IGBT for designs requiring 650V blocking voltage and moderate current handling around 30A. Consider the 1.8V Vce(sat) for conduction loss calculations at rated current. Evaluate the 45ns turn-off time against switching frequency requirements up to 100kHz. Compare thermal resistance values against heatsink capabilities for the intended ambient conditions.

Part Context

This part belongs to the RJP/RJH series of trench gate IGBTs from Renesas. It shares architectural similarities with other G7H family members but differs in specific voltage and current ratings. The TO-247A package is standard for medium-power industrial applications. It serves as a replacement for older generation IGBTs in PFC and inverter topologies.

Replacement Considerations

Direct pin-compatible substitutes may include other Renesas 650V/30A trench IGBTs in TO-247A packages. Verify Vce(sat) and switching times match original design margins. Check if alternative manufacturers offer equivalent trench gate devices with similar thermal characteristics.