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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 15A/32A 8DFN
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：15A, 32A
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1130pF @ 10V
- Power - Max：10W, 20W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WFDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The RJK0216DPA-00#J53 is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It is designed for switching applications such as motor drives and load switches, featuring low on-resistance and high-speed switching capabilities. The device supports 4.5V gate drive with low drive current requirements. Key electrical parameters include a drain-source voltage (V_DSS) of 60V, a continuous drain current (I_D) of 20A at 25°C, and a maximum on-resistance (R_DS(on)) of 21mΩ. It operates within a junction temperature range of -55°C to 150°C and is housed in the WPAK(3F) package.
Feature Summary
- Low on-resistance for efficient power handling
- High-speed switching performance
- Compatible with 4.5V gate drive logic
- Robust thermal stability
Applications
- Motor driver circuits
- Load switching applications
- DC-DC converter stages
Procurement Notes
Verify component authenticity through authorized Renesas distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity level specifications to prevent package damage during soldering processes.
Selection Notes
Select this component when a 60V N-channel MOSFET with 20A continuous current capability is required. The 21mΩ on-resistance suits low-loss designs. Verify that the application's thermal management can handle dissipation at the target ambient temperature. Ensure the gate drive circuit provides sufficient voltage for full enhancement.
Part Context
This part belongs to Renesas' discrete power MOSFET portfolio, specifically utilizing the WPAK packaging technology. It complements other automotive-grade and industrial-grade transistors in the series, offering a balance between conduction losses and switching speed for compact power electronics designs.
Replacement Considerations
Direct substitutes must match the 60V/20A rating and 21mΩ R_DS(on). Check pinout compatibility with the WPAK(3F) footprint. Evaluate thermal resistance values if operating near limits.
