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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 14A/16A 8DFN
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：14A, 16A
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：810pF @ 10V
- Power - Max：8W, 10W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The RJK0222DNS-00#J5 is a surface-mount N-channel Power MOSFET manufactured by Renesas Electronics Corporation. It features an 8-HWSON (3.3x3.3) package and supports a drain-source voltage of 30V with a continuous drain current of 25A at ambient temperature. The device exhibits a maximum on-resistance of 6.3 milliohms at 10V gate drive and 12.5A drain current, with a gate charge of 10.4 nC at 4.5V. Input capacitance is specified at 1890 pF at 10V. Thermal performance includes a power dissipation rating of 15W at case temperature, and the component operates within a junction temperature range up to 150°C.
Feature Summary
- N-channel enhancement mode construction for efficient switching applications
- Low on-resistance design optimized for high-current power management
- Compact 8-pin HWSON footprint suitable for space-constrained PCB layouts
Applications
- DC-DC converter circuits in portable electronic devices
- Power distribution modules for automotive electronics
- Load switching applications in industrial control systems
Procurement Notes
Verify the specific ordering suffix against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS3 directives as indicated in standard product classifications. Confirm lead times and availability directly with authorized distributors or the manufacturer, as supply chain conditions vary. Validate that the procurement channel provides genuine components with traceable origin.
Selection Notes
Select this component when a 30V N-channel MOSFET with low thermal resistance is required for compact designs. Evaluate the 6.3 milliohm on-resistance against system efficiency targets under expected load currents. Consider the 8-HWSON package dimensions for board space constraints. Verify gate drive voltage compatibility with the 10.4 nC gate charge requirement for optimal switching performance.
Part Context
This part belongs to the RJK03M5 series family from Renesas, which focuses on low-voltage, high-current power switching solutions. The series utilizes advanced silicon technology to achieve low on-resistance in small packages. This specific model represents a variant optimized for 30V applications, sharing common electrical characteristics with other members of the family while differing in specific packaging or testing configurations.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference parameters such as Vdss, Id, and Rds(on) when evaluating potential replacements. Ensure any substitute component matches the 8-HWSON package outline for mechanical compatibility.
