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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 15A/30A 8WPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：15A, 30A
- Rds On (Max) @ Id, Vgs：9.4mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1190pF @ 10V
- Power - Max：10W, 20W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WFDFN Exposed Pad
- Supplier Device Package：8-WPAK
- Grade：-
- Qualification：-
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Overview
The RJK03P7DPA-00#J5A is a P-channel power MOSFET manufactured by Renesas Electronics. It features a WPAK-8 (SON-8) surface-mount package designed for high-density installation. The device utilizes silicon technology and supports SMD/SMT mounting styles. Key electrical characteristics include a drain-source voltage rating of 30V, a continuous drain current capacity of 25A, and a maximum on-state resistance of 6.3mΩ at VGS = 10V. The component is lead-free and halogen-free, adhering to RoHS standards.
Feature Summary
- Low on-state resistance for efficient power switching
- High-speed switching capability with low drive current requirements
- Compatible with 4.5V gate drive logic levels
- Robust performance suitable for motor drive and load switch applications
Applications
- Motor drive circuits
- Load switch applications
- Smart pet camera robots
- Intelligent waste bins
- Smart terminal backup power systems
Procurement Notes
Verify the specific suffix #J5A against official Renesas documentation to confirm packaging details and compliance status. Confirm availability as this series may be subject to discontinuation or limited-time buy notices. Ensure the procurement channel provides valid traceability for industrial-grade components.
Selection Notes
Select this component for designs requiring a P-channel MOSFET with 30V breakdown and 25A current handling in a compact WPAK-8 footprint. Verify that the gate drive voltage meets the 4.5V logic requirement for optimal RDS(on) performance. Consider thermal management strategies appropriate for the SON-8 package in high-density PCB layouts.
Part Context
This part belongs to the RJK series of power MOSFETs from Renesas Electronics. The series includes various N-channel and P-channel variants optimized for automotive and industrial applications. The RJK03P7DPA-00#J5A specifically addresses the need for high-current P-channel switching in space-constrained environments.
Replacement Considerations
Consult the official Renesas cross-reference guide for verified substitutes within the RJK family. Compare pinouts and thermal characteristics when evaluating alternative packages such as HWSON-8 variants like the RJK03M5DNS.
