Single FETs, MOSFETs RJK0629DPE-00#J3 product image

RJK0629DPE-00#J3

  • Description:MOSFET N-CH 60V 85A 4LDPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:e84f98eed37e Category: Brand:

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RJK0629DPE-00#J3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 60V 85A 4LDPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RJK0629DPE-00#J3

  • Description:MOSFET N-CH 60V 85A 4LDPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:85A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):100W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LDPAK
  • Package / Case:SC-83

Single FETs, MOSFETs datasheet and documents for RJK0629DPE-00#J3

RJK0629DPE-00#J3

Single FETs, MOSFETs Overview

The RJK0629DPE-00#J3 is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 85 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 4.5 mΩ. It is housed in an LDPAK(S)-(1) / TO-263 surface-mount package with four leads. The component is rated for a maximum power dissipation of 100 W at case temperature and operates within a junction temperature range up to 175°C.

Single FETs, MOSFETs Feature Summary

  • Single N-channel enhancement mode MOSFET configuration
  • High current handling capability with 85 A continuous drain rating
  • Low on-resistance design for efficient power switching
  • Surface mount construction in LDPAK(S)-(1) package

Single FETs, MOSFETs Applications

  • Industrial motor control systems
  • Consumer electronics power management
  • General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix J3 indicates tape and reel packaging if required for automated assembly, as standard variants may differ. Confirm the LDPAK(S)-(1) footprint compatibility with PCB designs. Ensure thermal management solutions support the 100 W case dissipation rating. Check for RoHS compliance documentation corresponding to the manufacturing date code.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V single N-channel MOSFET with high current capacity is required. The 4.5 mΩ on-resistance balances conduction losses against gate drive requirements. The TO-263 form factor suits applications needing robust thermal performance without through-hole mounting constraints. Compare against alternatives if lower voltage or higher current density is needed.

Single FETs, MOSFETs Part Context

This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power MOSFET category. It utilizes silicon technology for high-voltage switching. The LDPAK(S)-(1) package provides a compact solution for surface-mount applications, offering improved thermal characteristics compared to standard plastic packages while maintaining compatibility with common reflow soldering processes.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout and thermal resistance parameters before considering generic equivalents.

RJK0629DPE-00#J3RJK0629DPE-00#J3

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