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RJK0629DPE-00#J3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 60V 85A 4LDPAK. Review the specifications below when checking this part for your BOM.
The RJK0629DPE-00#J3 is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 85 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 4.5 mΩ. It is housed in an LDPAK(S)-(1) / TO-263 surface-mount package with four leads. The component is rated for a maximum power dissipation of 100 W at case temperature and operates within a junction temperature range up to 175°C.
Verify the specific suffix J3 indicates tape and reel packaging if required for automated assembly, as standard variants may differ. Confirm the LDPAK(S)-(1) footprint compatibility with PCB designs. Ensure thermal management solutions support the 100 W case dissipation rating. Check for RoHS compliance documentation corresponding to the manufacturing date code.
Select this component when a 60 V single N-channel MOSFET with high current capacity is required. The 4.5 mΩ on-resistance balances conduction losses against gate drive requirements. The TO-263 form factor suits applications needing robust thermal performance without through-hole mounting constraints. Compare against alternatives if lower voltage or higher current density is needed.
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power MOSFET category. It utilizes silicon technology for high-voltage switching. The LDPAK(S)-(1) package provides a compact solution for surface-mount applications, offering improved thermal characteristics compared to standard plastic packages while maintaining compatibility with common reflow soldering processes.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout and thermal resistance parameters before considering generic equivalents.
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