Single FETs, MOSFETs RJK4006DPD-WS#J2 product image

RJK4006DPD-WS#J2

  • Description:MOSFET N-CH 400V 8A MP3A
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:39ace55ebc06 Category: Brand:

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RJK4006DPD-WS#J2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 400V 8A MP3A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RJK4006DPD-WS#J2

  • Description:MOSFET N-CH 400V 8A MP3A
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):65W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:MP-3A
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for RJK4006DPD-WS#J2

RJK4006DPD-WS#J2

Single FETs, MOSFETs Overview

The RJK4006DPD-WS#J2 is an N-channel enhancement mode MOSFET manufactured by Renesas Electronics. It features a maximum drain-source voltage (Vds) of 400 V and a continuous drain current (Id) of 8 A at 25°C. The device has a maximum on-resistance (Rds(on)) of 800 mΩ at 4 A and 10 V gate-source voltage. It is housed in a surface-mount MP package with four pins, measuring 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height. The component supports a maximum power dissipation of 65 W at case temperature and operates up to a junction temperature of +150 °C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode construction for high-voltage switching applications
  • Surface-mount MP package design for compact board integration
  • High-speed switching capability with low input capacitance

Single FETs, MOSFETs Applications

  • DC/DC converter circuits
  • Power supply switching stages
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix designation during procurement, as variations such as #J2 or #M0 may indicate different tape-and-reel packaging configurations or specific manufacturing lot codes without altering the electrical function. Confirm availability status, as this part number may be subject to obsolescence notices or production changes. Ensure that the requested quantity matches the standard shipping unit defined by the manufacturer's current distribution guidelines.

Single FETs, MOSFETs Selection Notes

Select this component when a 400 V rated N-channel MOSFET is required for surface-mount designs. The 8 A current rating and 800 mΩ on-resistance make it suitable for moderate power applications. Consider the MP package dimensions for PCB layout constraints. Evaluate thermal management requirements based on the 65 W case power dissipation rating to ensure reliable operation under load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Renesas RJK series of high-voltage MOSFETs designed for power electronics. The series offers various voltage ratings and packages to support diverse industrial and consumer applications. The RJK4006DPD-WS#J2 specifically targets applications requiring robust performance in a compact surface-mount form factor.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Renesas resources for potential alternatives if this component is obsolete.

RJK4006DPD-WS#J2RJK4006DPD-WS#J2

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