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RJK4512DPE-00#J3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 450V 14A 4LDPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJK4512DPE-00#J3
- Description：MOSFET N-CH 450V 14A 4LDPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：510mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：LDPAK
- Package / Case：SC-83
Single FETs, MOSFETs datasheet and documents for RJK4512DPE-00#J3
Single FETs, MOSFETs Overview
The RJK4512DPE-00#J3 is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 450V and a continuous drain current capacity of 14A at ambient temperature. The device exhibits a maximum on-resistance of 510 milliohms. Thermal performance includes a power dissipation rating of 100W at case temperature. The component is housed in a surface-mount LDPAK-S (TO-263) package, designed for efficient heat transfer in compact electronic assemblies.
Single FETs, MOSFETs Feature Summary
- High-voltage N-channel configuration suitable for robust switching applications
- Surface-mount LDPAK-S package optimized for thermal management
- Low on-resistance characteristics for improved efficiency
Single FETs, MOSFETs Applications
- Power supply circuits requiring high-voltage switching
- Motor control systems utilizing surface-mount components
- Industrial equipment power stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix J3 to confirm lead-frame vendor and lot traceability details as documented in Renesas manufacturing records. Ensure the ordering part number matches the required package variant LDPAK-S. Cross-reference datasheet specifications against application requirements before procurement to ensure compatibility with system voltage and current limits.
Single FETs, MOSFETs Selection Notes
Select this component when a 450V N-channel MOSFET is required in a TO-263 compatible footprint. Evaluate the 510mΩ on-resistance against thermal constraints to ensure the 100W case dissipation rating remains within safe operating limits. Confirm that the 14A current rating meets the peak and continuous load demands of the target circuit design.
Single FETs, MOSFETs Part Context
This part belongs to Renesas' discrete power MOSFET portfolio, specifically the RJK series designed for general-purpose power switching. The LDPAK-S package provides a balance between electrical performance and PCB space efficiency. It serves as a standard solution for medium-power applications where high voltage isolation and reliable switching are critical.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers. Consult official Renesas resources for potential obsolescence notices or recommended upgrades.
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