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Product Detailed Parameters
- Description：HIGH SPEED IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RJP3042DPP-00#T2 is a single N-channel IGBT manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter voltage (Vces) of 600V and a continuous collector current (Ic) of 30A at 25°C. The device has a typical saturation voltage (Vce(sat)) of 1.8V at 30A and 15V gate drive. It is housed in a TO-220AB package with a maximum power dissipation of 178.5W. The component operates within a junction temperature range of -40°C to +150°C and complies with the AEC-Q101 automotive qualification standard.
Feature Summary
- High-voltage switching capability suitable for industrial and automotive power applications
- Low saturation voltage for improved efficiency and reduced thermal stress
- Automotive-grade reliability certified under AEC-Q101 standards
Applications
- Motor control systems
- Industrial power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix #T2 indicates tube packaging when sourcing. Confirm the manufacturer part number matches exactly, as suffixes may denote tape-and-reel or other packaging variations. Check for active status or last-time-buy notices directly from Renesas official channels before procurement planning.
Selection Notes
Select this component where a 600V blocking voltage and 30A continuous current are required in a through-hole TO-220 form factor. Ensure the gate drive circuit can provide at least 15V to achieve the specified low Vce(sat). Verify thermal management capabilities align with the 178.5W power dissipation rating under expected operating conditions.
Part Context
This IGBT belongs to the RJP series of discrete power transistors designed for high-power switching applications. The series offers various voltage and current ratings packaged in standard through-hole formats like TO-220. These components are commonly used in motor drives and power conversion equipment requiring robust semiconductor switches.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Renesas official resources for qualified alternatives if this specific part number is discontinued or unavailable.
