RJP3045DPP-B1#T2F

$1.57

Description：HIGH SPEED IGBT
Series：*

SKU:f2ee7a842bdb Category: Single IGBTs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：HIGH SPEED IGBT
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

RJP3045DPP-B1#T2F

Overview

The RJP3045DPP-B1#T2F is a high-voltage power MOSFET manufactured by Renesas Electronics Corporation. This component is designed for use in switching applications requiring robust performance under high voltage conditions. It features a specific package type suitable for efficient thermal management and reliable operation in power supply circuits. The device integrates advanced semiconductor technology to ensure low on-resistance and fast switching speeds, contributing to overall system efficiency.

Feature Summary

High-voltage capability for demanding power applications
Optimized for efficient thermal dissipation
Designed for reliable switching performance

Applications

Switching power supplies
Motor control circuits
Industrial power conversion systems

Procurement Notes

Verify the exact part number including the suffix #T2F when ordering to ensure correct packaging and tape-and-reel configuration. Confirm compatibility with your design requirements regarding voltage ratings and current handling capabilities before procurement.

Selection Notes

Consider the maximum drain-source voltage and continuous drain current specifications when selecting this component for your circuit design. Ensure that the thermal resistance characteristics align with your heat sinking strategy to maintain safe operating temperatures during operation.

Part Context

This part belongs to Renesas' lineup of power MOSFETs, which are widely used in various electronic devices requiring efficient power management. The specific model indicates its classification within the company's product portfolio for high-voltage applications.

Replacement Considerations

Check for direct pin-compatible alternatives from Renesas or other manufacturers if sourcing issues arise. Ensure any substitute meets or exceeds the original electrical specifications and package dimensions.