ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：HIGH SPEED IGBT, 300V, 30A
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP3053DPP-A9#T2F is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. This component is designed for power switching applications, featuring a voltage rating of 300V and a current capacity of 30A. It belongs to the RJP3053 series, which includes Power MOSFETs and IGBTs intended for Plasma Display Panel (PDP) applications. The device is RoHS compliant and lead-free.
Feature Summary
- High-speed switching capability for efficient power conversion
- Designed specifically for PDP inverter maintenance projects
- Maintains consistent thermal performance under heavy loads
Applications
- Plasma Display Panel (PDP) inverters
- Inverter maintenance systems
- Power module installations requiring robust thermal stability
Procurement Notes
Verify the specific suffix A9#T2F against the official Renesas datasheet to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PDP inverter designs before procurement. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status if required by local regulations.
Selection Notes
Select this IGBT for applications requiring 300V blocking voltage and 30A continuous current handling. Consider its high-speed characteristics for high-frequency switching requirements typical in PDP technology. Evaluate thermal management solutions as the device maintains performance under heavy loads. Compare against standard IGBTs if lower speed or different voltage ratings are sufficient for the target application.
Part Context
This component is part of Renesas' portfolio of power semiconductors, specifically targeting display technologies. The RJP3053 series encompasses both MOSFETs and IGBTs optimized for PDP drivers. As an active product, it supports legacy and maintenance systems for plasma displays, offering a reliable solution for power inversion tasks within these specialized electronic assemblies.
Replacement Considerations
Direct substitutes should be sought from the same RJP3053 family or equivalent 300V/30A high-speed IGBTs. Verify pinout compatibility and thermal resistance parameters when considering alternative manufacturers. Ensure that any replacement maintains the high-speed switching characteristics required for PDP inverter efficiency.
