RJP30E3DPK-M2#T0

RJP30E3DPK-M2#T0

$9.44
  • Description:IGBT
  • Series:*

SKU:059d741bf42b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Download product information

RJP30E3DPK-M2#T0

Overview

The RJP30E3DPK-M2#T0 is a single IGBT from Renesas Electronics Corporation, part of the G5H series utilizing trench gate technology. It features a typical collector-to-emitter saturation voltage (VCE(sat)) of 1.6 V and a typical turn-off time (tf) of 150 ns. The component is RoHS compliant and packaged in bulk.

Feature Summary

  • Utilizes trench gate technology for enhanced performance
  • Designed for low collector to emitter saturation voltage
  • Engineered for high speed switching capabilities

Applications

    Procurement Notes

    Verify the specific suffix #T0 against official Renesas documentation to confirm packaging details and availability status. Ensure compliance with RoHS standards as indicated in public records. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and current stock levels before procurement.

    Selection Notes

    Select this IGBT for applications requiring low saturation voltage and fast switching speeds. Consider the G5H series specifications for thermal management and circuit integration. Evaluate the 1.6 V VCE(sat) and 150 ns tf parameters against system efficiency requirements.

    Part Context

    This component belongs to the G5H series of IGBTs manufactured by Renesas Electronics Corporation. The series is characterized by trench gate technology, offering improved electrical performance compared to previous generations. It is designed for robust industrial and automotive power applications.

    Replacement Considerations

    Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas cross-reference tools or datasheets for compatible alternatives.

    FAQ

    RJP30E3DPK-M2#T0RJP30E3DPK-M2#T0
    $9.44
    Buy Now