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The RJP30E3DPK-M2#T0 is a single IGBT from Renesas Electronics Corporation, part of the G5H series utilizing trench gate technology. It features a typical collector-to-emitter saturation voltage (VCE(sat)) of 1.6 V and a typical turn-off time (tf) of 150 ns. The component is RoHS compliant and packaged in bulk.
Verify the specific suffix #T0 against official Renesas documentation to confirm packaging details and availability status. Ensure compliance with RoHS standards as indicated in public records. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and current stock levels before procurement.
Select this IGBT for applications requiring low saturation voltage and fast switching speeds. Consider the G5H series specifications for thermal management and circuit integration. Evaluate the 1.6 V VCE(sat) and 150 ns tf parameters against system efficiency requirements.
This component belongs to the G5H series of IGBTs manufactured by Renesas Electronics Corporation. The series is characterized by trench gate technology, offering improved electrical performance compared to previous generations. It is designed for robust industrial and automotive power applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas cross-reference tools or datasheets for compatible alternatives.