ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP30H1DPD-A0#Q2 is a 650V, 30A trench gate and thin wafer technology (G7 series) Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes a TO-247AD package for through-hole mounting. The device features a typical collector-emitter saturation voltage of 1.8V at 20A and a typical turn-off time of 45ns under specified inductive load conditions. Designed for high-frequency switching applications between 20kHz and 100kHz, it supports power factor correction circuits without guaranteed short-circuit tolerance.
Feature Summary
- Utilizes G7 series trench gate and thin wafer technology for optimized switching performance
- Designed for high-frequency operation within the 20kHz to 100kHz range
- Provides fast switching characteristics with a typical turn-off time of 45ns
Applications
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify component authenticity and datasheet alignment before integration. Confirm that system designs do not rely on short-circuit withstand capability, as this parameter is not guaranteed for this specific IGBT model. Ensure thermal management solutions accommodate the specified saturation voltage and current ratings during continuous operation.
Selection Notes
Select this component for applications requiring 650V blocking voltage and 30A continuous current handling in a TO-247AD form factor. Consider the lack of short-circuit protection when designing driver circuits. Evaluate thermal resistance requirements based on the 1.8V saturation voltage drop at rated load currents to ensure reliable junction temperature maintenance.
Part Context
This part belongs to the RJP30H1DPD series of 650V IGBTs from Renesas. It shares the G7 technology platform with variants like the RJP65T43DPQ-A0 but differs in current rating and package style. The series targets industrial power conversion systems where efficient switching and moderate current capacity are required.
Replacement Considerations
Direct pin-compatible replacements may include other 650V/30A TO-247AD IGBTs from manufacturers such as Infineon or Mitsubishi, provided they match the Vce(sat) and tf specifications. Verify gate charge and threshold voltage compatibility with existing drive circuitry.
