ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP30H1DPP-MZ#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate and thin wafer technology to achieve high-speed switching performance, with typical turn-on time of 80 ns and turn-off time of 150 ns. The component is classified under the G6H-II series. It operates within a standard temperature range and features a Moisture Sensitivity Level (MSL) of 1, indicating unlimited dry shelf life. The device is RoHS non-compliant and carries an ECCN classification of EAR99.
Feature Summary
- Incorporates trench gate architecture for optimized switching characteristics
- Utilizes thin wafer technology to enhance electrical performance
- Designed for high-speed operation with reduced switching losses
Applications
- Industrial motor drive systems
- High-frequency power conversion circuits
- Inverter applications requiring fast switching speeds
Procurement Notes
Verify the specific suffix #T2 against official Renesas documentation to confirm tape-and-reel packaging configuration. Confirm that the RoHS status is explicitly noted as non-compliant in the final procurement order. Ensure the MSL rating aligns with storage and handling requirements. Cross-reference the part number with the latest datasheet revision to validate technical specifications before ordering.
Selection Notes
Select this IGBT when high-speed switching capabilities are critical for system efficiency. The G6H-II series technology supports applications demanding rapid transition times. Evaluate thermal management requirements based on the specific operating conditions. Consider the single-chip configuration for simplified circuit design compared to multi-chip modules.
Part Context
This component belongs to the RJP30H1DPP series from Renesas Electronics. It represents a discrete power semiconductor solution designed for robust performance in demanding electronic environments. The product line focuses on integrating advanced gate technologies to improve overall system reliability and switching speed.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pin compatibility and electrical parameters if considering alternative manufacturers. Ensure any replacement maintains the required switching speed and voltage ratings.
