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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP30H2DPK-M2#T0 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is designed for high-power switching applications, offering robust performance in industrial and automotive environments. The component features a TO-247 package configuration, suitable for through-hole mounting on printed circuit boards. This device integrates advanced semiconductor technology to ensure efficient power conversion and thermal management.
Feature Summary
- High-voltage insulation gate bipolar transistor architecture
- Optimized for high-efficiency power switching operations
- Robust thermal dissipation capabilities via standard package
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Inverter systems
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against your design requirements before procurement. Ensure that the TO-247 package dimensions match your PCB footprint and thermal interface specifications. Confirm that the supplier provides genuine Renesas Electronics Corporation components with traceable origin to guarantee reliability in critical power electronics applications.
Selection Notes
Select this IGBT when high voltage blocking capability and low conduction losses are required in medium to high-power circuits. Consider the thermal resistance and switching speed parameters relative to your system's frequency and heat sink constraints. Evaluate the gate drive requirements to ensure compatibility with your control logic levels and protection mechanisms.
Part Context
This component belongs to Renesas' discrete power semiconductor portfolio, focusing on reliable switching solutions for demanding electronic systems. It complements other power modules and transistors offered by the manufacturer, providing engineers with standardized options for building efficient power stages in various commercial and industrial equipment designs.
Replacement Considerations
Consult official cross-reference lists or distributor databases for direct pin-compatible substitutes. Verify that any alternative part matches the voltage rating, current capacity, and package type of the RJP30H2DPK-M2#T0 to maintain system integrity without redesigning the PCB layout.
