RJP4002ANS-00#Q1

$1.10

Description：IGBT
Series：*

SKU:b7c468a11d20 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RJP4002ANS-00#Q1

Overview

The RJP4002ANS-00#Q1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation, specifically engineered for Strobe Flash applications. It features a collector-emitter voltage rating of 400 V and a maximum collector current of 150 A. The device operates with a drive voltage of 2.5 V and is housed in an ultra-small surface mount VSON-8 package.

Feature Summary

Ultra small surface mount package
Nch IGBT for Strobe Flash

Applications

Strobe Flash drivers

Procurement Notes

Verify the specific suffix #Q1 against official Renesas documentation to confirm moisture sensitivity level, lead finish, and environmental compliance status. Ensure the component matches the required RoHS specifications before integration into production schedules.

Selection Notes

Select this component when designing circuits requiring high voltage isolation and fast switching for flash memory strobe signals. The 2.5 V drive voltage compatibility simplifies interface logic requirements compared to standard gate devices.

Part Context

This part belongs to the RJP4002 series of N-channel IGBTs designed for Strobe Flash applications. Similar parts include the RJP4002ANS and RJP4002ASA, which share core electrical characteristics but may differ in packaging or qualification standards.