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Product Detailed Parameters
- Description：IGBT 500V TO220FL
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：10V @ 12V, 300A
- Power - Max：45 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：100ns/200ns
- Test Condition：300V, 300A, 30Ohm, 12V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FL
- Grade：-
- Qualification：-
Download product information
Overview
The RJP5001APP-M0#T2 is a single N-channel IGBT manufactured by Renesas Electronics Corporation, designed for strobe flash applications. It features a collector-emitter breakdown voltage of 430 V and supports a peak collector pulse current of 200 A. The device operates within a junction temperature range of -40°C to 150°C and is housed in a TO-220FL through-hole package. Key electrical parameters include a turn-on delay time of 50 ns and a turn-off delay time of 100 ns under test conditions of 300 V, 200 A, 30 Ohm gate resistance, and 26 V gate drive. The maximum power dissipation is rated at 30 W.
Feature Summary
- N-channel IGBT structure optimized for high-speed switching in strobe flash circuits
- Robust thermal performance with a wide operating junction temperature range
- High peak current capability suitable for pulsed power applications
Applications
- Strobe flash power supplies
- Camera flash unit drivers
- Pulsed light source control systems
Procurement Notes
This component is officially listed as obsolete by the manufacturer. Production ended on August 5, 2026. Verify availability through authorized distributors or secondary markets. Ensure compatibility with existing PCB footprints and thermal management requirements before procurement. Check for alternative replacement parts if long-term supply stability is required.
Selection Notes
Select this part for applications requiring a single N-channel IGBT with 430 V blocking capability and 200 A pulse current handling. The TO-220FL package suits through-hole mounting with adequate heat sinking. Consider the 50 ns/100 ns delay times for timing-sensitive flash triggering. Evaluate thermal resistance and power dissipation limits relative to the specific duty cycle of the flash application.
Part Context
The RJP5001 series belongs to Renesas' portfolio of discrete power semiconductors tailored for consumer electronics and imaging devices. This specific model targets the strobe flash market, offering a balance of voltage rating and switching speed. It complements other Renesas components used in camera modules and portable lighting systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Renesas technical support for cross-reference recommendations.
