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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RJP6065DPE-00#J3 is a silicon N-channel IGBT manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, featuring a low collector-to-emitter saturation voltage of 1.8 V typ at IC = 40 A and VGE = 15 V. The device supports a gate-to-emitter voltage rating of ±30 V and utilizes Pb-free lead plating with chip bonding. It belongs to the RJP series of high-voltage power semiconductors intended for robust industrial and automotive environments.
Feature Summary
- Low collector-to-emitter saturation voltage for efficient power switching
- High-speed operation capability suitable for demanding inverter topologies
- Robust construction with Pb-free lead plating and chip bonding
Applications
- Power Factor Correction (PFC) circuits
- Uninterruptible Power Supply (UPS) systems
- Solar power generation inverters
- Welding equipment power stages
Procurement Notes
Verify component authenticity through authorized Renesas distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements before integration into production lines. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package degradation prior to soldering processes.
Selection Notes
Select this component when designing circuits requiring high-voltage N-channel IGBTs with low conduction losses. Evaluate thermal management strategies based on the 1.8 V saturation voltage at rated current. Consider the ±30 V gate drive limits when designing driver interfaces. Compare against similar RJP series parts for pinout compatibility and specific voltage-current trade-offs.
Part Context
This part is part of Renesas' high-voltage IGBT portfolio, often utilized in three-level inverter architectures and single PFC solutions. It complements other Renesas devices like the RJH60Mx and RJP/H60Fx series. The DPE package variant indicates a specific surface-mount configuration distinct from through-hole options within the same electrical family.
Replacement Considerations
Direct substitutes include the RJP6065DPM and other RJP6065 variants with compatible pinouts. Cross-reference with Hitachi Semiconductor models such as the 2SH28 or 2SH30 for functional equivalence in legacy designs. Verify that alternative IGBTs meet the same 600V class ratings and saturation voltage specifications.
