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The RJP6085DPK-00#T0 is a single IGBT power module manufactured by Renesas Electronics Corporation. It utilizes silicon technology and is housed in a TO-220AB through-hole package. The device features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 40 A. At a gate-emitter voltage of 15 V with a collector current of 40 A, the maximum saturation voltage is specified at 3.5 V. The component supports a maximum junction temperature of 150°C and has a maximum power dissipation of 178.5 W.
Verify component authenticity and datasheet alignment before procurement. Confirm that the specific suffix matches design requirements. Check for moisture sensitivity handling instructions during storage. Ensure supply chain stability as availability may vary. Validate RoHS compliance status against project specifications.
Select this component when a 600V rated IGBT with 40A current capacity is required. Consider the TO-220AB package for thermal management needs compatible with through-hole assembly. Evaluate the 3.5V saturation voltage impact on conduction losses at full load. Ensure the driving circuit can provide the necessary 15V gate drive signal.
This part belongs to the RJP series of single IGBT modules from Renesas Electronics. The series is designed for general-purpose power switching applications requiring reliable performance in industrial environments. It complements other components in power conversion systems where high voltage and moderate current handling are essential.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers. Consult official Renesas resources for potential obsolescence notices or recommended upgrades.