RJP60F4DPM-00#T1

Overview

The RJP60F4DPM-00#T1 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 45 A at 25°C. The device exhibits a typical on-state collector-emitter voltage of 2.1 V when driven at 15 V with a collector current of 22 A. Key switching parameters include a turn-on delay time of 45 ns and a turn-off delay time of 100 ns under standard test conditions. The component is housed in a TO-3PFM through-hole package, supporting a maximum power dissipation of 40 W and an operating junction temperature up to 150°C.

Feature Summary

• Utilizes trench gate technology for optimized switching performance and low conduction losses.
• Designed for robust operation in high-voltage applications with a 600 V blocking capability.
• Integrated into the RJP/H60Fx series recommended for Power Factor Correction (PFC) topologies.

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supply (UPS) systems
• Solar power generation inverters

Procurement Notes

Verify component authenticity through authorized channels due to potential supply chain variations. Confirm RoHS3 compliance status prior to integration. Check for Product Change Notifications (PCN) regarding label updates or manufacturing site changes. Ensure compatibility with existing thermal management designs given the 40 W power dissipation rating. Validate that the TO-3PFM package dimensions match the target PCB footprint requirements.

Selection Notes

Select this IGBT for applications requiring 600 V isolation and moderate current handling around 45 A. Consider the 2.1 V saturation voltage for efficiency calculations in PFC and UPS designs. Evaluate the 45 ns/100 ns switching times against the target operating frequency, typically between 20 kHz and 100 kHz. Compare thermal resistance values against the available heatsinking capacity to ensure junction temperatures remain within the 150°C limit during peak load conditions.

Part Context

This component belongs to the RJP/H60Fx family of trench-gate IGBTs from Renesas. These devices are specifically engineered for high-frequency switching applications such as PFC and solar inverters. The series emphasizes improved switching characteristics compared to older planar technologies, making it suitable for modern energy conversion systems requiring higher efficiency and compact form factors.

Replacement Considerations

Direct substitutes within the same family include the RJP60V0DPM-00#T1 and RJP60D0DPK-00#T0. Verify pinout compatibility and thermal interface specifications before swapping. Note that while electrical ratings may be similar, switching speeds and gate charge characteristics can vary slightly between specific suffixes.