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Product Detailed Parameters
- Description：IGBT TRENCH 650V 40A TO-3PFM
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
- Power - Max：68.8 W
- Switching Energy：170µJ (on), 110µJ (off)
- Input Type：Standard
- Gate Charge：70 nC
- Td (on/off) @ 25°C：30ns/107ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RJP65T43DPM-00#T1 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) from the G7H series, manufactured by Renesas Electronics Corporation. It features a TO-3PFM through-hole package with a collector-emitter breakdown voltage of 650V and a continuous collector current rating of 20A at 25°C. The device exhibits a typical saturation voltage of 1.8V at 20A and 15V gate drive. Switching performance includes a turn-off time of 45ns under standard test conditions. The component supports operating frequencies between 20kHz and 100kHz and has a maximum junction temperature of 150°C.
Feature Summary
- Utilizes trench gate and thin wafer technology for optimized switching characteristics
- Designed for high-speed switching applications within specified frequency ranges
- Provides robust isolation suitable for power conversion circuits
Applications
- High-speed switching circuits
- Power Factor Correction (PFC) circuits
- Air conditioner inverters
- IH cookers
- Welding equipment
Procurement Notes
Verify the specific suffix #T1 against official Renesas documentation to confirm tape-and-reel packaging details. Confirm end-of-life status and final shipment dates via manufacturer notices. Ensure compatibility with existing thermal management designs given the TO-3PFM form factor. Cross-reference datasheet revisions to validate electrical parameters before integration.
Selection Notes
Select this IGBT for designs requiring 650V blocking capability and moderate current handling up to 20A. The 45ns turn-off time suits applications operating between 20kHz and 100kHz. Consider the TO-3PFM package constraints for board layout and heat dissipation requirements compared to lower-profile alternatives.
Part Context
This component belongs to the RJP65T4x G7H series of trench-gate IGBTs. It shares technological foundations with other devices in the RJP/H65T4x family, designed for efficiency improvements in power electronics. The series targets industrial and consumer applications demanding reliable high-frequency operation.
Replacement Considerations
Direct substitutes include other RJP65T4x variants within the G7H series. Verify pinout compatibility and thermal resistance values when considering alternative packages like TO-247 or TO-220 versions from the same manufacturer.
