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The RJP65T54DPM-A0#T2 is a 650V, 30A trench gate IGBT from Renesas Electronics Corporation. It utilizes G7H series technology for high-speed switching and low conduction losses. The device features a collector-emitter saturation voltage of 1.8V typical at 20A and 15V gate drive. Switching times include a fall time of 45ns typical under inductive load conditions. It operates within a junction temperature range of -40°C to 150°C. The component is housed in a TO-247A package suitable for through-hole mounting.
Verify the specific suffix #T2 against manufacturer documentation to confirm tape-and-reel packaging details. Ensure compatibility with existing PCB footprints for the TO-247A package. Cross-reference electrical parameters with the official datasheet to validate performance requirements for the target application environment.
Select this component for designs requiring 650V blocking voltage and 30A continuous current handling. Consider the 1.8V Vce(sat) for efficiency optimization in power conversion stages. Evaluate thermal management solutions based on the specified operating temperature range and package characteristics.
This IGBT belongs to the G7H series, designed for high-frequency operation up to 100kHz. It serves as an upgrade to previous generations with improved switching speed and reduced energy losses. The part is intended for use in medium-power industrial and consumer electronics applications.
Direct replacements may include other 650V/30A trench IGBTs from Renesas such as the RJP65T43DPQ series. Verify pinout compatibility and thermal resistance values before substitution.