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RKS151KK#R1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is RKS151KK MIXER DIODE. Review the specifications below when checking this part for your BOM.
RF Diode specifications for RKS151KK#R1
- Description：RKS151KK MIXER DIODE
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Diode Type：-
- Voltage - Peak Reverse (Max)：-
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for RKS151KK#R1
RF Diode Overview
The RKS151KK is a silicon epitaxial planar diode designed for UHF/VHF tuner band switching applications. It operates with a maximum reverse voltage of 35 V and a power dissipation rating of 150 mW at 25°C ambient temperature. The junction temperature limit is 125°C, while the storage temperature range spans from -55°C to +125°C. Electrical characteristics include a maximum reverse current of 50 nA at 25 V, a forward voltage of 1.0 V at 10 mA, and a capacitance of 0.8 pF maximum at 6 V reverse bias and 1 MHz frequency. Forward resistance is limited to 0.7 Ω at 2 mA forward current and 100 MHz.
RF Diode Feature Summary
- Low capacitance suitable for high-frequency tuning circuits
- Low forward resistance for efficient signal switching
- Super small Flat Lead Package (SFP) optimized for surface mount design
RF Diode Applications
- UHF tuner band switching
- VHF tuner band switching
RF Diode Procurement Notes
Verify the specific ordering suffix against official Renesas documentation before procurement. Confirm that the component matches the exact package code PUSF0002ZB-A and laser mark K3. Ensure the supplier provides valid traceability data consistent with the manufacturer's specifications.
RF Diode Selection Notes
Select this component when low parasitic capacitance and minimal forward resistance are critical for RF switching performance. Verify that the operating environment remains within the specified thermal limits and that the circuit requirements align with the absolute maximum ratings provided in the datasheet.
RF Diode Part Context
This device belongs to the category of silicon epitaxial planar diodes manufactured by Renesas Technology Corp. It is specifically engineered for use in tuner band switching circuits within radio frequency systems. The component utilizes a specialized SFP package to facilitate compact surface-mount assembly.
RF Diode Replacement Considerations
Consult official Renesas documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility with other diode types without verifying electrical parameters and physical dimensions.
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