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The RM2333 is a P-Channel Enhancement Mode Power MOSFET manufactured by Rectron. It utilizes advanced trench technology to achieve low gate charge and excellent RDS(ON). The device operates with gate voltages as low as 2.5V, making it suitable for load switch and PWM applications. Key electrical parameters include a Drain-Source Voltage (VDS) of -12V, a Continuous Drain Current (ID) of -6A, and a maximum power dissipation of 1.8W. The on-state resistance is less than 45mΩ at VGS=-2.5V and less than 30mΩ at VGS=-4.5V.
Verify the specific ordering suffix when purchasing. A 'V' suffix indicates that the component is AEC-Q101 qualified. Confirm package details and reel specifications match your manufacturing requirements. Ensure compatibility with your system's voltage and current limits before integration.
Select this component for designs requiring efficient switching with low drive voltages. Consider the thermal characteristics and safe operating area for high-current applications. Verify that the SOT-23 package fits your board layout constraints. Evaluate the gate charge requirements against your driver capabilities.
This part belongs to Rectron's lineup of surface-mount power MOSFETs. It is designed for general-purpose switching in compact electronic devices. The device is lead-free and halogen-free, adhering to environmental standards. It serves as a reliable alternative for power management circuits requiring small form factors.
Check for exact pinout and parameter matches if substituting. No direct public substitute part numbers are confirmed for this specific model.
The device is suitable for operation with gate voltages as low as 2.5V.
Yes, parts with the 'V' ordering suffix are AEC-Q101 qualified.