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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 30V 4.3A SOT23
- Series：-
- Mfr：Rectron USA
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The RM3407 is a P-channel enhancement mode power MOSFET manufactured by Rectron USA. It utilizes advanced trench technology to achieve low on-resistance, making it suitable for load switch and PWM applications. The device features a drain-source voltage of -30V and a continuous drain current of -4.3A. On-state resistance is specified as less than 90mΩ at VGS=-4.5V and less than 52mΩ at VGS=-10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 surface mount package.
Feature Summary
- Advanced trench technology provides excellent RDS(ON) performance
- High power and current handling capability
- Surface mount package design
- Lead-free product construction
Applications
- PWM applications
- Load switch
- Power management
Procurement Notes
Verify the specific ordering suffix when purchasing. A 'V' suffix indicates AEC-Q101 qualification. Confirm the package type matches the required PCB layout, as the standard unit uses an SOT-23 form factor. Ensure the component meets the environmental standards required for the target assembly process.
Selection Notes
Select this component for circuits requiring a compact P-channel MOSFET with moderate voltage ratings. Evaluate the thermal resistance characteristics against the expected power dissipation levels. Consider the gate threshold voltage requirements relative to the driving logic levels available in the system design.
Part Context
This part belongs to the Rectron USA lineup of discrete semiconductor devices. It is classified as a P-Channel Enhancement Mode Power MOSFET. The device is designed for general-purpose switching tasks where space constraints necessitate a small outline transistor package.
Replacement Considerations
Check for equivalent P-channel MOSFETs with matching -30V VDS and -4.3A ID ratings. Verify that alternative packages fit the existing footprint if physical dimensions are critical.
