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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 40V 40A TO252-2
- Series：-
- Mfr：Rectron USA
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2960 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：80W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-2
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The RM40P40LD is a P-Channel Enhancement Mode Power MOSFET manufactured by Rectron. It utilizes advanced trench technology to achieve an on-state resistance of less than 14 mΩ at VGS = -10V and a continuous drain current of -40A with a drain-source voltage rating of -40V. The device operates within a junction temperature range of -55°C to 175°C and features a TO-252-2L package.
Feature Summary
- Advanced trench technology design for high density cell structure
- Fully characterized avalanche voltage and current capabilities
- Optimized for excellent heat dissipation performance
Applications
- Power switching applications
- Hard switched circuits
- High frequency circuits
- Uninterruptible power supply systems
Procurement Notes
Verify the specific ordering suffix when sourcing this component, as it indicates qualification status. Confirm that the requested part matches the standard industrial specification rather than automotive variants. Ensure compatibility with the required thermal management solutions for the intended operating environment.
Selection Notes
Select this component for designs requiring robust P-Channel switching with low gate charge characteristics. Consider the TO-252-2L package dimensions for PCB layout constraints. Evaluate the thermal derating curves against expected ambient temperatures to ensure safe operation under continuous load conditions.
Part Context
This device belongs to Rectron's lineup of P-Channel Enhancement Mode Power MOSFETs. It is designed using trench technology to provide superior on-resistance and low gate charge compared to conventional structures. The product line targets general-purpose power switching needs in various electronic equipment.
Replacement Considerations
Check for the RM40P40LDV variant if AEC-Q101 automotive qualification is required. Verify pinout compatibility before substituting with other P-Channel MOSFETs from different manufacturers.
