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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.8A SOT363-6L
- Series：-
- Mfr：Rectron USA
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.0018C @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：87pF @ 10V
- Power - Max：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363-6L
- Grade：-
- Qualification：-
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Overview
The RMD0A8P20ES9 is a P-Channel Enhancement Mode Power MOSFET manufactured by Rectron. It utilizes advanced trench technology to achieve low gate charge and excellent on-state resistance. The device features a drain-source voltage of -20V and a continuous drain current of -0.8A at 25°C. Key electrical parameters include an on-state resistance of 1.2Ω maximum at VGS=-4.5V, and a gate threshold voltage range of -0.3V to -1.0V. It operates within a junction temperature range of -55°C to 150°C and is housed in a surface-mount SOT-363 package with a thermal resistance of 156°C/W.
Feature Summary
- Advanced trench technology for optimized on-resistance and switching performance
- High power and current handling capability suitable for compact designs
- Lead-free product construction compliant with environmental standards
Applications
- Level shifted high side switch configurations
- Complementary MOSFET circuits
- General purpose power management applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. A suffix of 'V' indicates AEC-Q101 qualification, which differs from the standard RMD0A8P20ES9 part number. Confirm package dimensions and reel specifications match the design requirements before procurement. Ensure compliance with RoHS directives as the product is lead-free.
Selection Notes
Select this component for low-voltage P-channel switching applications requiring small form factors. The SOT-363 package supports surface mount assembly. Evaluate the thermal resistance and power dissipation limits against the expected operating junction temperature. Consider the gate threshold voltage characteristics for logic level compatibility in control circuitry.
Part Context
This component belongs to Rectron's portfolio of P-Channel Enhancement Mode Power MOSFETs. It is designed for general electronic applications where compact size and efficient switching are required. The device is distinct from automotive qualified variants which carry specific suffixes indicating AEC-Q101 certification.
Replacement Considerations
Direct substitutes require matching P-channel polarity, -20V minimum breakdown voltage, and compatible SOT-363 packaging. Verify that alternative devices meet the same on-state resistance and gate charge specifications to ensure circuit performance consistency.
