RF Diode RN739FT106 product image

RN739FT106

$0.31
  • Description:RF DIODE PIN 50V 100MW UMD3
  • Series:-

SKU:0376c7610a46 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

RN739FT106 is listed in the RF Diode range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is RF DIODE PIN 50V 100MW UMD3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for RN739FT106

  • Description:RF DIODE PIN 50V 100MW UMD3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.4pF @ 35V, 1MHz
  • Resistance @ If, F:7Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):100 mW
  • Operating Temperature:125°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMD3
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for RN739FT106

RN739FT106

RF Diode Overview

The RN739FT106 is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in the UMD3 (SOT-323) surface-mount package. It features a dual cathode common anode configuration with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 40 V and an average rectified forward current of 30 mA. The device exhibits a typical forward voltage of 370 mV at 1 mA and a maximum reverse current of 1 µA at 10 V. It supports a peak forward surge current of 200 mA and operates within a junction temperature range up to 125 °C, with a storage temperature range from -55 °C to 150 °C.

RF Diode Feature Summary

  • Low forward voltage drop for improved efficiency
  • Low reverse leakage current
  • High ESD protection capability
  • Compact SMD packaging suitable for portable electronics

RF Diode Applications

  • Computer systems
  • Mobile phones
  • Portable electronic devices

RF Diode Procurement Notes

Verify the exact ordering suffix against official documentation to confirm tape-and-reel quantities and RoHS compliance status. Ensure the component grade matches application requirements, as standard grades may not be suitable for automotive environments. Confirm supply status directly with the manufacturer or authorized distributors before design finalization.

RF Diode Selection Notes

Select this component for low-voltage signal rectification or clamping in space-constrained designs. Compare the 30 mA current rating and 40 V reverse voltage against circuit demands. Consider the thermal performance at 125 °C junction limit. Evaluate alternatives if automotive qualification or higher current handling is required.

RF Diode Part Context

This part belongs to the RB715F series of Schottky barrier diodes designed for general-purpose applications in consumer electronics. It utilizes silicon technology and offers a balance of low forward voltage and high ESD strength. The UMD3 package provides a small footprint for modern PCB layouts.

RF Diode Replacement Considerations

The RB715FFH is an automotive-grade alternative within the same series. Verify pinout compatibility and ensure the replacement meets specific environmental or reliability standards if the original application requires them.

RN739FT106RN739FT106
$0.31
Buy Now