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RP1L055SNTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 60V 5.5A MPT6. Review the specifications below when checking this part for your BOM.
The RP1L055SNTR is a silicon N-channel MOSFET from ROHM Semiconductor, packaged in the MPT6 surface-mount configuration. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 5.5 A at 25°C ambient temperature. The device supports a gate-source voltage of ±20 V and includes an integrated gate-source protection diode alongside a body diode for source-drain conduction. Thermal resistance from channel to ambient is specified at 62.5 °C/W when mounted on a ceramic board.
Verify the specific ordering suffix TR against official documentation to confirm reel packaging specifications. Ensure compatibility with the MPT6 footprint during PCB layout. Confirm that the component meets all required thermal management standards for the intended operating environment before final integration.
Select this component for applications requiring a 60 V rated N-channel MOSFET with high current handling capabilities. Consider the low on-resistance and compact MPT6 package for space-constrained designs. Evaluate thermal dissipation requirements based on the specified channel-to-ambient resistance values under actual mounting conditions.
This part belongs to the RP1L055SN series of silicon N-channel MOSFETs manufactured by ROHM Semiconductor. The series is designed for general-purpose switching applications, offering a balance of voltage rating and current capacity within a small surface-mount form factor suitable for modern electronic assemblies.
Consult official ROHM documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical ratings, and package dimensions.
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