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RRL035P03TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 30V 3.5A TUMT6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RRL035P03TR
- Description：MOSFET P-CH 30V 3.5A TUMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TUMT6
- Package / Case：6-SMD, Flat Leads
Single FETs, MOSFETs datasheet and documents for RRL035P03TR
Single FETs, MOSFETs Overview
The RRL035P03TR is a single-channel P-Channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an SOT-363T-6 surface-mount package. The device supports a drain-source voltage of 30 V and a continuous drain current of 3.5 A. Key electrical parameters include a typical on-resistance of 50 mOhms at a drive voltage of -4 V, a gate-source voltage rating of ±20 V, and a threshold voltage of 2.5 V. The total gate charge is 8 nC, with power dissipation rated at 1 W. Operating temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Designed for low-voltage driving applications with optimized performance at -4 V gate drive.
- Features fast switching speeds suitable for high-frequency power management circuits.
- Constructed in a compact surface-mount package to facilitate space-constrained PCB layouts.
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Low-side and high-side load switches
- Power management units in portable electronics
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against the manufacturer's latest datasheet to ensure correct packaging and tape specifications. Confirm that the component meets all required automotive or industrial qualification standards if applicable to the target design. Cross-reference pinout configurations with existing board designs to prevent integration errors during procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel MOSFET with a 30 V rating and 3.5 A current capacity is required in a small SOT-363T footprint. Consider the 50 mOhm on-resistance at -4 V drive for efficiency calculations in low-voltage systems. Ensure the thermal management strategy accommodates the 1 W power dissipation limit within the specified operating temperature range.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's portfolio of medium-power switching MOSFETs designed for general-purpose power control. It serves as a discrete solution for managing power flow in battery-operated devices and consumer electronics where size and switching speed are critical constraints.
Single FETs, MOSFETs Replacement Considerations
The RF4E075ATTCR is listed as a recommended replacement with similar specifications. Verify compatibility regarding package dimensions and electrical characteristics before substitution.
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