RS7N160BHTB1

Single FETs, MOSFETs Overview

The RS7N160BHTB1 is an N-channel power MOSFET from the ROHM RS7 series, housed in a DFN5060T8LSHAAE (DFN5060-8S) surface-mount package. It features a drain-source voltage (V_DSS) of 80V and a continuous drain current (I_D) of 160A. The device exhibits low on-resistance, with typical values of 2.7mΩ at V_GS=6V and 2.2mΩ at V_GS=10V. Key electrical parameters include a total gate charge (Q_g) of 39nC, a power dissipation (P_D) of 160W, and a reverse recovery time (t_rr) of 68ns. It operates within a storage temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for efficient power management
• High-power DFN5060T8LSHAAE package for thermal performance
• Lead-free plating compliant with RoHS directives
• Halogen-free construction

Single FETs, MOSFETs Applications

• Switching applications
• Motor drivers
• DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB1 against official ROHM documentation to confirm tape-and-reel packaging details. Ensure the component meets environmental standards such as RoHS compliance and halogen-free requirements for your specific manufacturing process. Confirm that the application does not involve automotive equipment, as this product is designated for standard-grade use only.

Single FETs, MOSFETs Selection Notes

Select the RS7N160BHTB1 for designs requiring high current handling up to 160A with an 80V rating. Its low gate charge facilitates fast switching speeds suitable for DC/DC converters. The compact DFN5060 footprint aids in space-constrained layouts while providing robust heat dissipation capabilities compared to smaller packages.

Single FETs, MOSFETs Part Context

This component belongs to the ROHM RS7 series of power MOSFETs, which are engineered for high-efficiency power management solutions. The series utilizes a specialized DFN5060T8LSHAAE package designed to balance high power dissipation with a small physical footprint. These devices undergo rigorous testing, including 100% Rg and UIS verification, to ensure reliability in demanding industrial and consumer electronics environments.

Single FETs, MOSFETs Replacement Considerations

Officially documented substitutes within the same family include RS7N200BHTB1, RS7E200BGTB1, and RS7P200BMTB1. Verify compatibility by comparing drain-source voltage, continuous drain current, and on-resistance specifications against the original design requirements.