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RSH065N06TB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 60V 6.5A 8SOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RSH065N06TB1
- Description：MOSFET N-CH 60V 6.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：37mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 5 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for RSH065N06TB1
Single FETs, MOSFETs Overview
The RSH065N06TB1 is a silicon N-channel MOSFET designed for low on-resistance switching applications. It features a built-in gate-source protection diode and is housed in a small SOP8 surface mount package. Key electrical parameters include a drain-source voltage of 60V, a continuous drain current of ±6.5A, and a typical static drain-source on-state resistance of 28mΩ at VGS=4.5V. The device has a total power dissipation of 2.0W and a total gate charge of 16nC.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient switching performance
- Integrated gate-source protection diode against static electricity
- Compact SOP8 surface mount package design
Single FETs, MOSFETs Applications
- Switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix TB1 to confirm tape-and-reel packaging with a basic unit quantity of 2500 pieces. Ensure compatibility with standard SOP8 footprint dimensions (6.0x5.0mm) during PCB layout. Confirm that the component meets RoHS standards as specified in the datasheet documentation before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for general-purpose electronic equipment requiring a 60V rated N-channel MOSFET. Consider the 4V drive capability when designing gate driver circuits. Evaluate thermal management requirements based on the 2.0W power dissipation limit and 62.5°C/W thermal resistance characteristics under standard mounting conditions.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's 4V Drive Nch MOSFET series, optimized for low-voltage driving applications. The product line targets general-use electronic devices such as audio-visual equipment, office automation, and communication devices. It is not intended for radiation-tolerant or high-reliability safety-critical systems like medical or aerospace equipment.
Single FETs, MOSFETs Replacement Considerations
Consult official ROHM documentation for verified substitute part numbers. Cross-reference absolute maximum ratings and pin configurations carefully when evaluating alternatives.
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