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RSR025N05HZGTL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 45V 2.5A TSMT3. Review the specifications below when checking this part for your BOM.
The RSR025N05HZGTL is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It features a TSMT3 (SOT-346T) surface-mount package and operates with a drain-source voltage of 45V and a continuous drain current of 2.5A. The device exhibits a maximum on-state resistance of 100mΩ at VGS=10V and 2.5A, with a gate threshold voltage ranging from 1.0V to 3.0V. Total gate charge is typically 3.6nC. It supports an operating junction temperature range of -55°C to +150°C and includes built-in gate-source protection diodes.
Verify the specific suffix TL against official documentation to confirm packaging details such as reel size and tape width. Confirm RoHS compliance status and lead plating specifications directly with the manufacturer or authorized distributors before procurement. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability.
Select this component for designs requiring a compact N-channel MOSFET with low on-resistance in a 3-terminal SMD footprint. Consider the 45V breakdown voltage and 2.5A current rating for appropriate load handling. Verify that the gate drive voltage aligns with the specified threshold characteristics and check thermal derating curves for high-temperature environments.
This part belongs to the RSR series of small signal MOSFETs from ROHM Semiconductor. It is designed for general switching and amplification tasks where space constraints are critical. The TSMT3 package provides a balance between thermal performance and board real estate efficiency for consumer and automotive electronics.
RSR025N05HZGTL is functionally equivalent to RSR025N05HZG when considering pinout and electrical characteristics. Verify package compatibility and ensure any substitute meets AEC-Q101 qualification if automotive use is required.
Yes, the datasheet specifies that the device includes a built-in gate-source protection diode.
The maximum operating junction temperature is 150°C.
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