Single FETs, MOSFETs RTR020P02TL product image

RTR020P02TL

  • Description:MOSFET P-CH 20V 2A TSMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f153ee803915 Category: Brand:

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RTR020P02TL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 20V 2A TSMT3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RTR020P02TL

  • Description:MOSFET P-CH 20V 2A TSMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:135mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TSMT3
  • Package / Case:SC-96

Single FETs, MOSFETs datasheet and documents for RTR020P02TL

RTR020P02TL

Single FETs, MOSFETs Overview

The RTR020P02TL is a P-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It features a -20V drain-source breakdown voltage and supports a continuous drain current of -2A. The device exhibits a typical on-resistance of 135 mΩ at a gate-source voltage of -2.5V, with a maximum rating of 180 mΩ at -4.5V. Key electrical parameters include a gate charge of 4.9 nC, a threshold voltage of 2V, and a power dissipation capacity of 1W. It operates within a temperature range of -55°C to +150°C and utilizes an SOT-346T (TSMT3) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Optimized for low-voltage drive applications with specified performance at -2.5V gate bias.
  • Compact three-terminal surface-mount design suitable for space-constrained PCB layouts.
  • Enhanced switching characteristics defined by specific rise and fall time metrics.

Single FETs, MOSFETs Applications

  • Battery-powered portable electronic devices
  • Low-side or high-side load switching circuits
  • DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix against the manufacturer's official datasheet to confirm pinout compatibility and packaging specifications. Ensure that the ordering part number matches the required reel or cut-tape configuration. Cross-reference the RoHS compliance status and automotive qualification requirements if applicable to your specific design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel solution is required for low-voltage logic interfaces. The -2.5V drive capability makes it suitable for systems powered by single-cell lithium batteries or low-voltage microcontrollers. Evaluate the thermal management requirements based on the 1W power dissipation limit and the thermal resistance inherent to the small outline package.

Single FETs, MOSFETs Part Context

This component belongs to the RTR series of power MOSFETs from ROHM Semiconductor. The series focuses on providing low on-resistance in miniature packages to support modern miniaturization trends. The RTR020P02TL specifically addresses the need for efficient switching in battery-operated consumer electronics where size and drive voltage are critical design factors.

Single FETs, MOSFETs Replacement Considerations

The RTR020P02HZGTL is documented as a recommended replacement with identical pinout and package dimensions. Verify that the substitute part meets all original electrical specifications and environmental ratings before implementation.

RTR020P02TLRTR020P02TL

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