RX1214B300Y,114

Description：RF TRANS NPN 60V 1.4GHZ CDFM2
Series：-

SKU:8c6aece6bd3e Category: Bipolar RF Transistors Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 60V 1.4GHZ CDFM2
Series：-
Mfr：Ampleon USA Inc.
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：60V
Frequency - Transition：1.4GHz
Noise Figure (dB Typ @ f)：-
Gain：8dB
Power - Max：570W
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：21A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-439A
Supplier Device Package：CDFM2
Grade：-
Qualification：-

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RX1214B300Y,114

Overview

The RX1214B300Y is an NPN microwave power transistor manufactured by Philips Semiconductors, now part of Ampleon USA Inc. It utilizes a silicon planar epitaxial structure housed in a SOT439A metal ceramic flange package with the base connected to the flange. Designed for pulsed operation, it delivers a minimum output power of 250 W at 50 V within the 1.2 to 1.4 GHz frequency range. The device features internal input and output matching networks, interdigitated emitter structures, and diffused ballasting resistors to ensure high efficiency and current sharing.

Feature Summary

Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics and excellent lifetime
Multicell geometry improves power sharing and reduces thermal resistance
Internal input and output matching networks for an easy circuit design

Applications

Common base class-C wideband amplifiers operating under pulsed conditions
L-band radar applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status as specifications may supersede earlier versions. Ensure handling procedures account for beryllium oxide content; avoid mechanical damage to the BeO slab during installation or disposal to maintain safety compliance.

Selection Notes

Select this component for L-band radar systems requiring high pulsed power output between 1.2 and 1.4 GHz. Ensure the application supports common base Class-C topology and pulsed duty cycles not exceeding 5% with pulse widths up to 150 μs. Verify that the mounting base temperature remains within specified limits to maintain thermal performance and prevent junction overheating.

Part Context

Originally released by Philips Semiconductors in February 1997, this device represents legacy microwave technology now managed under the Ampleon brand portfolio. It serves as a specialized discrete semiconductor solution for high-frequency amplification tasks where robustness against voltage standing wave ratio (VSWR) variations is critical for system reliability.