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The S16-4148/TR13 is an eight-diode switching array in a surface-mount SOIC-16 package. It features a working peak reverse voltage of 75 V and a continuous forward current of 400 mA per diode. The device operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1500 mW. Electrical characteristics include a breakdown voltage minimum of 90 V at 100 µA and a maximum reverse current of 20 µA at 75 V. The typical reverse recovery time is 5.0 ns.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging configuration. The TR suffix indicates tape and reel delivery containing 2,500 pieces per standard EIA-481-B carrier. Confirm that the e3 designation is present if RoHS compliance is required for the assembly process.
Select this component when multiple isolated switching channels are required in a compact footprint. Ensure the 75 V reverse voltage rating exceeds the maximum circuit operating voltage. Verify that the 400 mA per-diode current capacity meets the load requirements without exceeding the 1500 mW total package dissipation limit.
This part belongs to Microchip Technology's high-reliability switching diode family. It provides a robust alternative to discrete components by consolidating eight channels into one SOIC-16 housing. The design supports automated surface-mount assembly processes while maintaining electrical performance suitable for demanding industrial environments.
S16-4150 serves as a functional substitute with a lower 50 V reverse voltage rating. Verify that the reduced voltage withstand capability aligns with the target application requirements before implementation.
Each individual diode within the array supports a continuous forward current of 400 mA.
Pin 1 is defined by a dot located on the top surface of the molded package.
The typical reverse recovery time (trr) is 5.0 nanoseconds.