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The S1BC846BPDW1T1G is a dual general-purpose NPN/PNP bipolar junction transistor manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-363 (SC-88) surface-mount package. The device supports a maximum collector current of 100 mA and operates with a collector-emitter voltage of 65 V for the NPN side and 50 V for the PNP side. It features a minimum DC current gain (hFE) of 200, a transition frequency of 100 MHz, and a power dissipation rating of 380 mW. The component is qualified under AEC-Q101 standards and functions across an operating temperature range from -55°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and qualification status. Ensure the ordering part number matches the required AEC-Q101 compliance level. Confirm package dimensions and marking codes align with design specifications before procurement.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. The SOT-363 package offers significant board space savings compared to discrete components. Verify that the 100 mA current rating and 380 mW power dissipation meet the thermal and load requirements of the target circuit application.
This part belongs to the BC846 series of dual general-purpose transistors. It serves as an automotive-grade variant designed for environments requiring strict quality control and traceability. The series provides a cost-effective solution for replacing multiple discrete transistors in signal processing and switching tasks.
Compatible substitutes include BC846BPDW1T1G and LBC846BPDW1T1. Verify pinout compatibility and electrical parameter overlaps before substitution.