S200-50

Overview

The S200-50 is an NPN RF power transistor manufactured by Microsemi Corporation. It operates within a frequency range of 1.5MHz to 30MHz and provides a maximum power output of 320W. The device features a collector-emitter breakdown voltage (Vceo) of 110V and supports a maximum continuous collector current (Ic) of 30A. Gain specifications are documented between 12dB and 14.5dB, with a minimum DC current gain (hFE) of 10 at 1A and 5V. It utilizes the 55HX base-mount package and is rated for a maximum junction temperature of 150°C.

Feature Summary

• High-power RF amplification capability up to 320W in the HF band
• Robust thermal performance supporting high junction temperatures
• Base-mount construction designed for efficient heat dissipation

Applications

• HF radio transmitter power stages
• Industrial heating and plasma generation systems
• RF signal amplification in broadcast equipment

Procurement Notes

Verify component authenticity through authorized channels as the part status is listed as discontinued. Confirm package integrity and pin configuration against the 55HX specification before integration. Review available datasheets for specific test conditions regarding gain and power metrics to ensure compatibility with existing circuit designs.

Selection Notes

Select this component for applications requiring high power density in the 1.5MHz to 30MHz range. Ensure the design accommodates the 110V breakdown voltage and 30A current limits. Evaluate thermal management solutions suitable for the 55HX base-mount form factor to maintain operation within the 150°C junction temperature limit.

Part Context

This component belongs to Microsemi's discrete semiconductor portfolio, specifically within the bipolar RF transistor category. It serves as a high-reliability solution for power amplification tasks where robust construction and wide bandwidth are required. The manufacturer specializes in analog mixed-signal and high-performance semiconductors for communication and industrial markets.

Replacement Considerations

As the part status is discontinued, verify availability of direct substitutes or equivalent NPN RF transistors with matching 320W power ratings and 55HX packages. Cross-reference electrical parameters such as Vceo, Ic, and transition frequency to ensure functional equivalence in existing circuits.