S200-50A

Description：RF POWER TRANSISTOR
Series：-

SKU:c13617935af5 Category: Bipolar RF Transistors Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：RF POWER TRANSISTOR
Series：-
Mfr：Microsemi Corporation
Package：Bulk
Transistor Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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S200-50A

Overview

The S200-50A is an RF NPN transistor manufactured by Microsemi Corporation, designed for high-power applications in the frequency range of 1.5MHz to 30MHz. It features a maximum collector current of 30A and a collector-emitter breakdown voltage of 110V. The device supports a maximum power dissipation of 320W and operates at junction temperatures up to 150°C. Packaged in a 55HX base-mount configuration, it offers a DC current gain (hFE) of 10 at 1A and 5V, with a gain ranging from 12dB to 14.5dB.

Feature Summary

High power handling capability suitable for demanding RF environments
Broad operational frequency range covering 1.5MHz to 30MHz
Robust thermal performance with a 150°C maximum junction temperature rating

Applications

RF power amplification
Industrial radio transmitters
Broadcast equipment

Procurement Notes

Verify component authenticity through authorized channels as the part status is listed as obsolete. Confirm package integrity and pin alignment against the 55HX specification before integration. Review manufacturer documentation for any specific handling requirements related to high-power RF devices.

Selection Notes

Select this component when designing circuits requiring high current capacity and significant power dissipation within the specified VHF band. Ensure the heat sinking solution accommodates the 320W power rating and that the operating frequency aligns with the 1.5MHz to 30MHz transition frequency limits.

Part Context

This transistor belongs to the S200 series of RF power devices produced by Microsemi. The series is characterized by its ability to deliver substantial output power in a rugged base-mount package, making it distinct from lower-power surface mount alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Verify compatibility with existing circuit designs if sourcing from secondary markets due to the obsolete status.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.