S3D10065E2

$3.06

Description：DIODE ARRAY SCHOTT 650V 5A DPAK
Series：-

SKU:d638236e55ff Category: Diode Arrays Brand: SMC Diode Solutions

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY SCHOTT 650V 5A DPAK
Series：-
Mfr：SMC Diode Solutions
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：5A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 5 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：8 µA @ 650 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

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S3D10065E2

Overview

The S3D10065E2 is a Silicon Carbide Schottky diode array manufactured by SMC Diode Solutions. It features a 650 V DC reverse voltage rating and a 5 A average forward current. The component utilizes a TO-252-3 (DPAK) surface mount package with two leads and a tab. Key electrical characteristics include zero reverse recovery time, an ultra-low switching loss profile, and a maximum junction temperature of 175°C. Switching speeds remain independent of operating temperature, ensuring consistent performance across thermal variations.

Feature Summary

Utilizes Silicon Carbide material for superior thermal and electrical performance
Features zero reverse recovery time to eliminate switching losses
Supports high junction temperatures up to 175°C for robust operation
Maintains switching speed independence from operating temperature

Applications

Industrial power supply systems
Consumer electronics power management
Digital system power regulation

Procurement Notes

Verify the specific suffix 'E2' against official manufacturer documentation to confirm the exact pinout and packaging configuration. Ensure that the selected variant matches the required TO-252-3 form factor and thermal specifications for the target application design.

Selection Notes

Select this component for applications requiring high-frequency switching with minimal energy loss. The 175°C junction rating allows for reduced heatsinking requirements compared to standard silicon devices. Confirm compatibility with the 650V blocking voltage and 5A current limits in the circuit design.

Part Context

This device belongs to the SMC Diode Solutions discrete semiconductor product line, specifically within the diode array category. It serves as a high-performance alternative to traditional silicon rectifiers, offering enhanced efficiency in power conversion circuits through its advanced wide-bandgap material properties.