S3D40065D

$10.17

Description：DIODE ARR SIC 650V 48A TO-247AD
Series：-

SKU:ab39ca6bc37b Category: Diode Arrays Brand: SMC Diode Solutions

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 650V 48A TO-247AD
Series：-
Mfr：SMC Diode Solutions
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：48A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 20 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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S3D40065D

Overview

The S3D40065D is a silicon carbide (SiC) diode array manufactured by SMC Diode Solutions. It features a dual common cathode configuration housed in a TO-247-3 package. The device supports a maximum repetitive peak reverse voltage of 650 V and an average forward current of 20 A per diode, totaling 48 A. It operates at junction temperatures up to 175°C with ultra-low switching loss and temperature-independent switching speeds.

Feature Summary

Utilizes silicon carbide semiconductor structure for high-performance rectification
Features dual common cathode configuration within a single package
Provides ultra-low switching loss characteristics
Maintains switching speeds independent of operating temperature

Applications

High-frequency power conversion circuits
Industrial motor drive systems
Uninterruptible power supply (UPS) units
Solar inverter applications

Procurement Notes

Verify the specific suffix designation against the manufacturer datasheet to confirm pinout and thermal pad specifications. Ensure the procurement documentation explicitly references the SiC material type and the 650V rating. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements before finalizing orders.

Selection Notes

Select this component for designs requiring high efficiency at elevated frequencies due to its low switching losses. The 175°C junction temperature capability allows for robust operation in thermally constrained environments. Consider the dual common cathode topology for space-saving implementations in synchronous rectification or freewheeling roles.

Part Context

This part belongs to the S3D series of silicon carbide diode arrays from SMC Diode Solutions. These components are engineered for high-power density applications where traditional silicon devices face efficiency limitations. The series emphasizes reliability and thermal performance in demanding industrial and automotive-grade power electronics.