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The SA2T18H450W19SR6 is an Airfast RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within the frequency range of 1805 MHz to 1880 MHz. The device provides an average output power of 89 W at a supply voltage of 30 V. Key electrical characteristics include a gain of 16.6 dB and a drain efficiency of 55%. The component utilizes a dual configuration and is housed in an NI-1230S-4S4S package.
Verify the specific datasheet revision and package marking against the NI-1230S-4S4S specification. Confirm operational parameters such as gain and efficiency match the required system design. Check for any updated thermal management requirements associated with the 89 W output power rating. Ensure compatibility with existing biasing networks for 30 V operation.
Select this component for applications requiring high linearity and efficiency in the 1.8 GHz band. The dual configuration allows for push-pull or balanced amplifier designs to improve stability and power handling. Consider thermal resistance and heat sink capabilities when designing for continuous 89 W output. Verify that the 16.6 dB gain meets the system's drive requirements without excessive pre-amplification.
This part belongs to NXP’s Airfast series of RF power LDMOS transistors, designed for demanding wireless infrastructure applications. The series emphasizes high power density and reliability. The SA2T18H450W19SR6 specifically targets cellular base station bands, offering a balance of power, gain, and efficiency suitable for modern communication standards.
Public confirmed substitute part numbers are not available in the provided documentation. Consult NXP official resources for direct replacements or pin-compatible alternatives.