SBC846BDW1T1G

SBC846BDW1T1G

$0.21
  • Description:TRANS 2NPN 65V 100MA SC88/SC70
  • Series:-

SKU:20fdf5718102 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 65V 100MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:380mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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SBC846BDW1T1G

Overview

The onsemi SBC846BDW1T1G is a dual NPN general-purpose transistor housed in a SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device meets AEC-Q101 standards with PPAP capability, making it suitable for automotive applications. Electrical characteristics include a minimum DC current gain of 200 at 2 mA and a transition frequency of 100 MHz. Thermal performance specifies a total power dissipation of 380 mW and an operating temperature range from -55°C to +150°C.

Feature Summary

  • Dual NPN configuration within a compact SOT-363 package designed for low-power surface mount applications.
  • AEC-Q101 qualified and PPAP capable, supporting unique site and control change requirements for automotive use.
  • Lead-free, halogen-free, and BFR-free construction compliant with RoHS directives.

Applications

  • General purpose amplifier circuits
  • Automotive electronic systems requiring AEC-Q101 qualification
  • Low-power surface mount designs

Procurement Notes

Verify the specific ordering suffix to confirm the presence of the 'S' prefix, which indicates AEC-Q101 qualification and PPAP capability. Confirm that the component is supplied in tape and reel packaging as specified in the manufacturer's documentation. Ensure compliance with RoHS and halogen-free requirements during procurement validation.

Selection Notes

Select this component when a dual NPN transistor with high voltage tolerance is required in a small footprint. The BC846 variant offers higher breakdown voltages compared to the BC847 or BC848 options within the same series. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or dense PCB layouts.

Part Context

This part belongs to the BC846BDW1 series, which also includes BC847BDW1 and BC848CDW1 variants. These devices share the same SOT-363 package and pinout but differ in their voltage ratings and current gain specifications. The 'S' prefix denotes automotive-grade qualification, distinguishing it from standard commercial versions.

Replacement Considerations

Direct substitutes within the same family include BC846BDW1T1G. Other variants like BC847BDW1T1G or BC848CDW1T1G share the package but have different voltage ratings. Verify voltage and gain requirements before substituting with non-'S' prefixed parts if automotive qualification is needed.

FAQ

What is the difference between BC846BDW1T1G and SBC846BDW1T1G?

The 'S' prefix in SBC846BDW1T1G indicates that the device is AEC-Q101 qualified and PPAP capable, meeting specific automotive site and control change requirements not present in the standard BC846BDW1T1G version.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) for the BC846 variant is 65 V, while the collector-base voltage (VCBO) is rated at 80 V.

Is this component suitable for high-temperature environments?

Yes, the device supports a junction and storage temperature range from -55°C to +150°C, allowing operation in demanding thermal conditions.

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