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The SBC847CDXV6T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA. The device operates with a transition frequency of 100MHz and dissipates up to 500mW of power. DC current gain is specified at a minimum of 420 under standard test conditions. The component is housed in an SOT-563 surface-mount package and supports an operating temperature range from -55°C to 150°C. It holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and variant selection. Confirm that the component meets all required automotive quality standards if used in safety-critical systems. Cross-reference datasheet parameters with design specifications before final procurement decisions.
Select this component when a dual NPN configuration is required in a small footprint. Ensure the 45V voltage rating and 100mA current capacity align with circuit requirements. Consider the SOT-563 package dimensions for PCB layout constraints. Verify thermal management capabilities given the 500mW power dissipation limit.
This part belongs to the BC847 series of small-signal NPN transistors. The 'S' prefix indicates automotive grade qualification, while 'CD' specifies the DC current gain binning. The 'XV6' denotes the specific SOT-563 package type. This series is widely used in general-purpose applications across various industries.
Direct substitutes include other automotive-qualified dual NPN arrays in SOT-563 packages with matching electrical characteristics. Verify pinout compatibility and thermal performance before substitution.